PART |
Description |
Maker |
AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes x8 Flash EEPROM 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
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Advanced Linear Devices, Inc.
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STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
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AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压 MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
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Advanced Monolithic Systems, Inc. ADMOS[Advanced Monolithic Systems]
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PT8A990A PT8A991A |
50V Single N-Channel HEXFET Power MOSFET in a SOT-89 (TO-243AA) package MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:55A; On-Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:D2PAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 9功能遥控器?
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Mitel Networks, Corp.
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BUZ902D BUZ903D |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
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Magnatec
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KI5902DC |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
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TY Semiconductor Co., Ltd
|
KI5903DC |
Drain-Source Voltage Vds -20V Gate-Source Voltage Vgs -12V
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TY Semiconductor Co., Ltd
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ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
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http:// STMICROELECTRONICS[STMicroelectronics] 意法半导
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FTD2011 |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V
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TY Semiconductor Co., Ltd
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KI1302DL |
Drain-source voltage VDS 30 V Gate-source voltage VGS -20 V
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TY Semiconductor Co., Ltd
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KI6968BEDQ |
Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V
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TY Semiconductor Co., Ltd
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2SK627 |
Drain Source Voltage-: VDSS= 50V(Min)
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Inchange Semiconductor ...
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